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| PD - 93845 PROVISIONAL IRF7607 HEXFET(R) Power MOSFET 1 8 Trench Technology q Ultra Low On-Resistance q N-Channel MOSFET q Very Small SOIC Package q Low Profile (<1.1mm) q Available in Tape & Reel q S S S G A A D D D D 2 7 VDSS = 20V 3 6 4 5 RDS(on) = 0.030 T o p V ie w Description New trench HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8TM package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8TM Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 6.5 5.2 50 1.8 1.2 0.014 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 70 Units C/W www.irf.com 1 1/19/00 IRF7607 V(BR)DSS V(BR)DSS/TJ PROVISIONAL Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.030 VGS = 4.5V, ID = 6.5A 0.045 VGS = 2.5V, ID = 5.2A 1.0 V V DS = VGS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 70C -100 V GS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- R D = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 19 13 1.8 A 50 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, I F = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Surface mounted on FR-4 board, t 5sec. Pulse width 300s; duty cycle 2%. 2 www.irf.com PROVISIONAL IRF7607 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 10 10 1.50V 1.50V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 5.3A TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7607 2000 PROVISIONAL 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 6.5A 5.3A VDS = 10V 8 C, Capacitance (pF) C iss 1200 6 800 4 400 2 0 1 Coss Crss 10 100 0 0 4 8 12 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 C I D , Drain Current (A) 10 1ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com PROVISIONAL IRF7607 6.0 0.20 5.0 0.10 I D , Drain Current (A) VGS(th) , Variace ( V ) 4.0 0.00 Id = 250A -0.10 3.0 2.0 -0.20 1.0 -0.30 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature ( C) T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7607 0.040 PROVISIONAL R DS ( on) , Drain-to-Source On Resistance ( ) 0.10 R DS(on) , Drain-to -Source Voltage ( ) 0.035 0.08 0.030 0.06 0.025 Id = 5.3A 0.04 VGS= 2.5V VGS = 4.5V 0.020 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, - Drain Current (A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com PROVISIONAL IRF7607 Micro8TM Package Outline Dimensions are shown in millimeters (inches) L E A D A S S IG N M E N T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0 .2 5 (.0 1 0 ) M A M S IN G L E 1234 DUAL 1234 D1 D1 D2 D2 8765 D IM A A1 B C D e e1 E H L IN C H E S M IN .0 3 6 .0 0 4 .0 1 0 .0 0 5 .1 1 6 M AX .0 4 4 .0 0 8 .0 1 4 .0 0 7 .1 2 0 M IL L IM E T E R S M IN 0 .9 1 0 .1 0 0 .2 5 0 .1 3 2 .9 5 MAX 1 .1 1 0 .2 0 0 .3 6 0.18 3.05 .0 2 5 6 B A S IC .0 1 2 8 B A S IC .1 1 6 .1 8 8 .0 1 6 0 .1 2 0 .1 9 8 .0 2 6 6 0 .6 5 B A S IC 0 .3 3 B A S IC 2 .9 5 4 .7 8 0 .4 1 0 3 .0 5 5 .0 3 0 .6 6 6 e 6X e1 A -CB 8X 0 .0 8 (.0 0 3 ) M A1 C AS B S 0 .1 0 (.0 0 4 ) L 8X C 8X R E C O M M E N D E D F O O T P R IN T 1 .0 4 ( .0 4 1 ) 8X 0 .3 8 8X ( .0 1 5 ) 3 .2 0 ( .1 2 6 ) 4 .2 4 5 .2 8 ( .1 6 7 ) ( .2 0 8 ) N O TE S : 1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 . 2 C O N TR O LL IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H . 0 .6 5 6 X ( .02 5 6 ) Micro8TM Part Marking Information EX AM PLE : T H IS IS A N IR F 7501 D A T E C O D E (YW W ) A Y = LA ST D IG IT O F YEA R W W = W EE K 45 1 75 01 P AR T N U M B ER TOP www.irf.com 7 IRF7607 PROVISIONAL Micro8TM Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N OTES: 1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1. 2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R. 3 3 0 .0 0 (1 2 .9 9 2 ) MAX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www.irf.com |
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